saturation voltage การใช้

• In IGBT, charge carrier concentration at emitter side in n-base layer is low as saturation voltage.
• By contrast, the standard two-transistor mirror operates down to the saturation voltage of its output transistor.
• This allows the voltage drop from the unregulated voltage to the regulated voltage to be as low as the saturation voltage across the transistor.
• Carrier distribution in n-base is similar to that of saturation bipolar transistor and low saturation voltage of MCS, even at high voltage ratings, can be achieved.
• Trouble is, you need to produce a voltage exceeding the saturation voltage of the transistor ( V CEsat ) and a few 10's of microamps for it to work.
• An additional complication is that liquids also exhibit a saturation phenomenon : after certain voltage, the saturation voltage, the further increase of voltage will not change the contact angle, and with extreme voltages the interface will only show instabilities.
• Since the circuit was biased for high frequency operation ( \ scriptstyle V _ { BE } ~ \ ge ~ 0.7 ), this represents a saturation voltage for Q3 of 0.1 to 0.2 volts.
• The transistor is designed so that its collector saturation voltage ( ) is less than the base emitter voltage ( roughly 0.6 V ) minus the Shottky diode's forward voltage drop ( roughly 0.2 V ).
• A July 2008 press release states the PET plastic matrix allows for better crystal polarization and that this " along with other proprietary processing steps provides the potential of a polarization saturation voltage required by EEStor, Inc . " The patent states this is done at 180 癈 with 4000 V.
• Even in a transistorised amplifier with hard clipping, the gain of the transistor will be reducing ( leading to nonlinear distortion ) as the output current increases and the voltage across the transistor reduces close to the saturation voltage ( for bipolar transistors ), and so " full power " for the purposes of measuring distortion in amplifiers is usually taken as a few percent " below " clipping.
• The output signal from the device is also on the inner conductor, and consists of an AC voltage centred on a bias voltage of about 8 to 12 V . The output voltage is bounded at the lower end by the saturation voltage of the integrated IEPE amplifier ( typically 0.5 to 2 volts ), and at the upper end by the maximum compliance voltage of the current source ( which may be anything between about 6 and 30 volts ).
• Since collector emitter voltage is equal to the sum of its own base emitter voltage and the collector-emitter voltage of the first transistor, both positive quantities in normal operation, it always exceeds the base-emitter voltage . ( In symbols, \ mathrm { V _ { CE2 } = V _ { CE1 } + V _ { BE2 } > V _ { BE2 } } \ Rightarrow \ mathrm { V _ { C2 } > V _ { B2 } } always . ) Thus the " saturation " voltage of a Darlington transistor is one V BE ( about 0.65 V in silicon ) higher than a single transistor saturation voltage, which is typically 0.1-0.2 V in silicon.