metalorganic การใช้

• The susceptor is made from a material resistant to the metalorganic compounds used; graphite is sometimes used.
• Apart from its use as rocket fuel, UDMH is a nitrogen source in metalorganic vapour phase epitaxy thin-film deposition.
• It is a colourless, volatile liquid that is used in MOVPE ( Metalorganic Vapor Phase Epitaxy ) as an alternative to germane.
• He has made pioneering contributions to metalorganic chemical vapor deposition ( MOCVD ) and continuous-wave room-temperature quantum-well lasers.
• The compound is generally classified as a metalorganic species, meaning that its properties are strongly influenced by the organic ligands but the compound lacks metal-carbon bonds.
• The company is the largest independent outsource producer of epiwafers manufactured by metalorganic vapour phase epitaxy ( MOCVD ), molecular beam epitaxy ( MBE ) and chemical vapor deposition ( CVD ).
• Organotellurium compounds such as dimethyl telluride, diethyl telluride, diisopropyl telluride, diallyl telluride and methyl allyl telluride are precursors for synthesizing metalorganic vapor phase epitaxy growth of II-VI compound semiconductors.
• In contrast to the definition of ligand in metalorganic and inorganic chemistry, in biochemistry it is ambiguous whether the ligand generally binds at a metal site, as is the case in hemoglobin.
• Thin films can be produced by chemical vapor deposition, metalorganic vapour phase epitaxy, electrodeposition, pulsed laser deposition, sputtering, sol-gel synthesis, atomic layer deposition, spray pyrolysis, etc.
• As of 2014 multi-junction cells were expensive to produce, using techniques similar to semiconductor device fabrication, usually metalorganic vapour phase epitaxy but on " chip " sizes on the order of centimeters.
• The amount of metalorganic vapour transported depends on the rate of carrier gas flow and the bubbler temperature, and is usually controlled automatically and most accurately by using an ultrasonic concentration measuring feedback gas control system.
• In 1963 he was the first to document epitaxial growth of silicon on sapphire, and in 1968 was the first to publish on metalorganic chemical vapor deposition ( MOCVD ) for the epitaxial growth of GaAs.
• These volatile compounds are decomposed along with ammonia, arsine, phosphine and related hydrides on a heated substrate via metalorganic vapor phase epitaxy ( MOVPE ) process in the production of light-emitting diodes ( LEDs ).
• In a bubbler a carrier gas ( usually hydrogen in arsenide & phosphide growth or nitrogen for nitride growth ) is bubbled through the metalorganic liquid, which picks up some metalorganic vapour and transports it to the reactor.
• In a bubbler a carrier gas ( usually hydrogen in arsenide & phosphide growth or nitrogen for nitride growth ) is bubbled through the metalorganic liquid, which picks up some metalorganic vapour and transports it to the reactor.
• More recent advances include deposition of strained silicon using metalorganic vapor phase epitaxy ( MOVPE ) with metalorganics as starting sources, e . g . silicon sources ( silane and dichlorosilane ) and germanium sources ( germane, germanium tetrachloride, and isobutylgermane ).
• Manesevit holds 16 patents, and was awarded the 1985 IEEE Morris N . Liebmann Memorial Award " for pioneering work in metalorganic chemical vapor deposition, epitaxial-crystal reactor design, and demonstration of superior quality semiconductor devices grown by this process ."
• InAlN is grown epitaxially by metalorganic chemical vapour deposition or molecular beam epitaxy in combination with other semiconductor materials such as gallium nitride, aluminium nitride and their associated alloys to produce semiconductor wafers, which are then used as the active component in semiconductor device manufacture.
• The alternating layers of the two different semiconductors which form the quantum heterostructure may be grown on to a substrate using a variety of methods such as molecular beam epitaxy ( MBE ) or metalorganic vapour phase epitaxy ( MOVPE ), also known as metalorganic chemical vapor deposition ( MOCVD ).
• The alternating layers of the two different semiconductors which form the quantum heterostructure may be grown on to a substrate using a variety of methods such as molecular beam epitaxy ( MBE ) or metalorganic vapour phase epitaxy ( MOVPE ), also known as metalorganic chemical vapor deposition ( MOCVD ).