substitutional การใช้

• It was like a substitutional activity.
• This is a schematic illustrating how the lattice is strained by the addition of substitutional solute.
• Substitutional lattice diffusion is often contingent upon the availability of point vacancies throughout the crystal lattice.
• Colored diamonds contain crystallographic defects, including substitutional impurities and structural defects, that cause the coloration.
• As such, substitutional solute atoms do not interact with the shear stress fields characteristic of screw dislocations.
• Alloys are usually classified as substitutional or interstitial alloys, depending on the atomic arrangement that forms the alloy.
• In substitutional solid solutions, these stress fields are spherically symmetric, meaning they have no shear stress component.
• Diffusion within the crystal lattice occurs by either interstitial or substitutional mechanisms and is referred to as lattice diffusion.
• If we can approach this as more of a substitutional situation, it gives us an opportunity to be successful.
• It is a substitutional alloy : atoms of the two constituents may replace each other within the same crystal structure.
• For example, a crystalline material will contain Hall Petch relationship ), interstitial atoms, vacancies or substitutional atoms.
• The crystalline structure of the material is body-centered cubic with a substitutional solid solution with atoms of tungsten.
• When load is calculated as the difference between the fittest genotype present and the average, this creates a substitutional load.
•  On The Substitutional Approach to Logical Consequence 411-446 in Mistakes of Reasoning : Essays in Honour of John Woods.
• Phonon transport simulations indicate that substitutional defects such as nitrogen or boron will primarily lead to scattering of high-frequency optical phonons.
• Further, it occurs without the diffusion of either substitutional or interstitial atoms and so martensite inherits the composition of the parent austenite.
• Substitutional doping methods to further refine the crystal structure and control defect concentrations can also play a significant role in increasing the conductivity.
• The assumed mechanism is trapping of migrating vacancy by substitutional silicon resulting in the Si-V ( semi-divacancy ) configuration.
• In substitutional lattice diffusion ( self-diffusion for example ), the atom can only move by substituting place with another atom.