precharge การใช้

• Poor maintenance of precharge can destroy an operating accumulator.
• This is known as a " precharge " operation, or " closing " the row.
• Of course the inductive loads on the distribution system must be switched off during the precharge mode.
• The design precharge normally ensures that the moving parts do not foul the ends or block fluid passages.
• The commands correspond to standard DRAM access cycles, such as row select, precharge, and refresh commands.
• The precharge circuit can be either power resistors connected in series with the loads until the capacitors are charged.
• To control the internal node in the precharge path, a control switch is used as shown in Fig 1.
• When a bank is open, there are four commands permitted : read, write, burst terminate, and precharge.
• The commands are similar to those of normal SDRAM, except for the reassignment of the precharge and burst terminate opcodes:
• A precharge may be commanded explicitly, or it may be performed automatically at the conclusion of a read or write operation.
• Non-volatile memory devices do not use the refresh commands, and reassign the precharge command to transfer address bits A20 and up.
• The gas precharge in an accumulator is set so that the separating bladder, diaphragm or piston does not reach or strike either end of the operating cylinder.
• The precharge " 1 " state of the first gate may cause the second gate to discharge prematurely, before the first gate has reached its correct state.
• This uses up the " precharge " of the second gate, which cannot be restored until the next clock cycle, so there is no recovery from this error.
• The prefetch architecture takes advantage of the specific characteristics of memory accesses to DRAM . Typical DRAM memory operations involve three phases : bitline precharge, row access, column access.
• Again, there is a minimum time, the row precharge delay, t RP, which must elapse before that bank is fully idle and it may receive another activate command.
• As in previous SDRAM encodings, A10 is used to select command variants : auto-precharge on read and write commands, and one bank vs . all banks for the precharge command.
• As in previous SDRAM encodings, A10 is used to select command variants : auto-precharge on read and write commands, and one bank vs . all banks for the precharge command.
• A special sequence of three activate / precharge sequences specifies the row which was activated more often than a device-specified threshold ( 200, 000 to 700, 000 per refresh cycle ).
• The circuit would support a current limited precharge mode during the charging of capacitors, and then switch to an unlimited mode for normal operation when the voltage on the load is 90 % of full charge.